The Radiation Effect on Low Noise Amplifier Implemented in the Space-Aerial–Terrestrial Integrated 5G Networks

This paper provides the details of a study on effects electron irradiation two Low Noise Amplifiers (LNA), Gallium-Arsenide (GaAs) pseudomorphic high mobility transistor (pHEMT) based and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that properties GaAs SiGe HBT's are very tolerant gamma, neutron, proton without additional radiation hardening. Nowadays, commercials shelves (COTS) LNAs been used in CubeSat space communication systems which may be connected to other networks for implementation space-aerial- terrestrial integrated 5G network (SATIN) projects, satellites, launched into Medium Earth Orbits. suggest degrade LNAs' performance might even lead its failure. Located at front end receiver system, this conducted such investigation evaluate under considering physics technology each LNA, respectively. The results indicate both technologies affected after irradiation. As result, degradation communications system inter-satellite radio link. After assessment quality link level, it has found will risk dose BER degrades proportionally level.